Congratulations to our 2024 and 2025 Summer Scholar, Julia C. Rodrigues, whose work at George Mason University under the guidance of Prof. Ethan Ahn, has been now published. Julia Rodrigues is a student at William & Mary. She has also received VMEC Gold Awards in 2024 and 2025.

Variability characteristics of non-stoichiometric, low-cost silicon oxide resistive memory

Julia C. Rodrigues ;  Fitunerediate G. Gebeyehu;  Pranav U. Choori;  José Sánchez del Río Sáez ; Ethan C. Ahn

AIP Advances 15, 125001 (2025)

https://doi.org/10.1063/5.0300195

Abstract:

Resistive-switching random access memory (RRAM) is an important class of data storage and computing devices. A recent technological trend requires RRAM devices to be manufactured in an environmentally and economically sound way. Here, we designed and developed the non-stoichiometric resistive-switching memory device (Ti/SiOx/TiNx) that entirely consists of bio-compatible, non-toxic, and inexpensive materials by using the simple microfabrication techniques. In view of the strong demand for memories that can be co-located with or embedded in computation elements (for memory-centric or non-von Neumann computing hardware), we thoroughly characterized the non-stoichiometric, low-cost silicon oxide RRAM device in terms of both cycle-to-cycle and device-to-device variabilities. Our device features variability characteristics comparable to the state-of-the-art RRAM device based on metal oxides and other complex heterostructures. Intermediate resistance states were also straightforwardly obtained by applying relatively high compliance currents.